SiC 二极管

Qorvo's silicon carbide (SiC) diodes are high-performance Merged-PiN-Schottky (MPS) diodes with excellent IFSM (surge) ratings. With zero reverse recovery charge and 175°C maximum junction temperature, these 650 V, 1200 V and 1700 V Schottky diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.