GaN HEMTs

Qorvo 提供包含不同功率、电压和频率级别水平的广泛的氮化镓 (GaN) 分立式晶体管产品，采用裸片级和封装级解决方案。我们的产品提供高性能 GaN 和工业标准封装的便利性，可加快设计和制造，且都由我们行业领先的可靠性作为保障。

GaN HEMT (51)

型号	描述	频率最小值 MHz	频率最大值 MHz	类型	增益 dB	OP1dB dBm	Psat dBm	NF dB	PAE %	漏极效率 %	Vd V	Idq mA	测量条件	封装类型	封装 mm
	Reset All	4,000 DC	25,000 450	Input-Matched	25.9 11	58.75 58.75	62.7 2 x 53.0		80.8 >	77.8 52	65 12 to 32	1,500 12		DFN die Die NI-1230 (Eared) NI-1230 (Earless) NI-200 NI-360 Ni50-CW NI-650 NI-780 QFN RF-565	3 x 3 3.0 x 3.0 4 x 3 4.0 x 3.0 7.2 x 6.6 0.83 x 0.55 x 0.10 0.98 x 0.55 x 0.10 4.1 x 13.97 4.1 x 5.1 4.5 x 4.0 19 x 17.68 x 4.49 20.57 x 9.78 x 3.63

型号
51 匹配的产品 (51 total) 增加/删除参数

QPD0005	2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor	2,500	5,000		18.8		39.4		72.9	48	12	DFN	4.5 x 4.0
QPD0007	DC - 5 GHz, 20 Watt, 48 Volt, GaN RF Transistor	DC	5,000		19		43		73	48	32.5	DFN	4.5 x 4.0
QPD0020	DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor	DC	6,000		18.8		45.4		77.8	48	30	QFN	4.0 x 3.0
QPD0030	DC - 5 GHz, 45 Watt, 48 Volt GaN RF Power Transistor	DC	5,000		22.3		46.9	71.5		48	85	QFN	4.0 x 3.0
QPD0050	DC - 3.6 GHz, 75 Watt, 48 Volt GaN RF Power Transistor	DC	3,600		22.5		48.7	80		48	130
QPD0060	DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor	DC	3,600		25		49.5	73		48	150
QPD1003	1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET	1,200	1,400		19.9		57.3	66.7		50	750	RF-565
QPD1006	450 Watt, 50 Volt, 1.2 - 1.4 GHz GaN IMFET	1,200	1,400		17.5		54.9			45	750	Ni50-CW	19 x 17.68 x 4.49
QPD1008	DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor	DC	3,200		> 17		52	70		50	260	NI-360
QPD1008L	DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor	DC	3,200		> 17		52	70		50	260	NI-360
QPD1009	DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor	DC	4,000		24		42.3	72		50	26	QFN	3 x 3
QPD1010	DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor	DC	4,000		24.7		40.4	70		50	18	QFN	3 x 3
QPD1013	DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor	DC	2,700		21.8			64.8		65	240	DFN	7.2 x 6.6
QPD1015	DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor	DC	3,700		20		48.5	74		50	65	NI-360
QPD1015L	DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor	DC	3,700		20		48.5	74		50	65	NI-360
QPD1016	500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor	DC	1,700		23.9		58.3	77.4		50	1,000	NI-780
QPD1016L	500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor	DC	1,700		15		57.3		67	50	1,000	NI-780
QPD1022	DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor	DC	12,000		24			68.8		32	50	QFN	3.0 x 3.0
QPD1025	1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor	960	1,215		22.5		62.7	77.2		65	1,500	NI-1230 (Earless)
QPD1025L	1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor	960	1,215		22.5		62.7	77.2		65	1,500	NI-1230 (Eared)
QPD1026L	1300 Watt, 65 Volt, 420 - 450 MHz GaN RF Input-Matched Transistor	420	450	Input-Matched	25.9		61.2	80.8		65	1,500	NI-1230 (Eared)
QPD1028	1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor	1,200	1,400		18	58.75	59		70	65	750	NI-780	20.57 x 9.78 x 3.63
QPD1028L	1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor	1,200	1,400		18	58.75	59		70	65	750	NI-780	20.57 x 9.78 x 3.63
QPD1029L	1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor	1,200	1,400				61.8	75		65	1,500	NI-1230 (Eared)
QPD1035	DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor	DC	6,000		12.1 (Gain at P3dB)		47 (P3dB)		52.2	50	65		4.1 x 5.1
QPD1035L	DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor	DC	6,000		12.1 (Gain at P3dB)		47 (P3dB)		52.2	50	65		4.1 x 13.97
T1G4020036-FL	DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor	DC	3,500		18.1		2 x 53.0		67.6	50	520	NI-650
T1G4020036-FS	DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor	DC	3,500		18.1		2 x 53.0		67.6	50	520	NI-650
T2G4005528-FS	DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor	DC	3,500		16		47.2	>	52	28	200	NI-360
T2G6000528-Q3	DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor	DC	6,000		17		40		53	28	50	NI-200
T2G6001528-Q3	DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor	DC	6,000		15.5		42	>	72	28	100	NI-200
T2G6003028-FL	DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor	DC	6,000		14		45	50		28	200	NI-200
T2G6003028-FS	DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor	DC	6,000		14		45	50		28	200	NI-200
TGF2023-2-01	DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT	DC	18,000		18		38	71.6		12 to 32	25 to 125	Die
TGF2023-2-02	DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT	DC	18,000		21		40.1	73.3		12 to 32	50 to 250	Die
TGF2023-2-05	DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT	DC	18,000		18		43	78.3		12 to 32	100 to 500	Die
TGF2023-2-10	DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT	DC	14,000		19.8		47.3	69.5		12 to 32	200 to 1,000	Die
TGF2023-2-20	DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT	DC	14,000		19.2		50.5	70.5		12 to 32	400 to 2,000	Die
TGF2819-FL	DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor	DC	4,000		> 14		51			50	250	NI-360
TGF2819-FS	DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor	DC	4,000		> 14		51			50	250	NI-360
TGF2929-FL	DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor	DC	3,500		> 14		50.3	> 50		28	260	NI-360
TGF2933	DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor	DC	25,000		15		38.6	57		28	80	die	0.83 x 0.55 x 0.10
TGF2936	DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor	DC	25,000		16		40	58		28	80	die	0.98 x 0.55 x 0.10
TGF2954	DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT	DC	12,000		19.6		44.5	71.6		32	100	Die
TGF2965-SM	0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor	30	3,000		18		37.8	63		32	25	QFN	3 x 3
TGF2977-SM	DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor	DC	12,000		13		37.8	50		32	25	QFN	3 x 3
TGF2978-SM	DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor	DC	12,000		11		42.8	46		32	100	QFN	4 x 3
TGF2979-SM	DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor	DC	12,000		11		43.4	45		32	150	QFN	4 x 3
TGF3015-SM	0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor	30	3,000		17		40.4	63		32	50	QFN	3 x 3
TGF3020-SM	4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor	4,000	6,000		12.7		38.3	59.6 @ 5GHz		32	25	QFN	3 x 3
TGF3021-SM	0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor	30	4,000		19		45	73		32	65	QFN	4 x 3

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GaN HEMT (51)

GaN HEMT (51)

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