QPD1022
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor
关键性能
- Frequency Range: DC - 12 GHz
- Output Power (P3dB): 11.0 W at 2 GHz
- Linear Gain: 24.0 dB typical at 2 GHz
- Typical PAE3dB: 68.8 % at 2 GHz
- Operating voltage: 32V
- Low thermal resistance package
- CW and Pulse capable
- 3 x 3 mm package
The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
特别应用
- Military Radar
- Commercial Radar
- Land Mobile and Military Radio Communications
- Active Antennas
- Base Stations
- Jammers
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 12,000 |
| 增益(dB) | 24 |
| PAE(%) | 68.8 |
| Vd(V) | 32 |
| Idq(mA) | 50 |
| 封装类型 | QFN |
| 封装(mm) | 3.0 x 3.0 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.