QPD0020
DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor
The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations.
The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.
The device is housed in an industry-standard 4 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant.
主要特性
- Operating Frequency Range: 4400 - 5000 MHz
- Operating Drain Voltage: +48 V
- Maximum Output Power (PSAT): 34.7 W
- Maximum Drain Efficiency: 77.8%
- Efficiency-Tuned P3 dB Gain: 18.8 dB
典型应用
- W-CDMA / LTE
- Macrocell Base Station Driver
- Microcell Base Station
- Small Cell Final Stage
- Active Antenna
- Land Mobile and Military Radio Communications
- General Purpose Applications
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记High-Performance Defense and Aerospace Solutions
手册Modelithics Qorvo GaN Library
手册Qorvo Field-Proven GaN Solutions
手册
设计资源
相关解决方案
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