QPD1013
DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor
关键性能
- Frequency Range: DC - 2.7 GHz
- Output Power (P3dB): 178 W at 1.8 GHz
- Linear Gain: 21.8 dB typical at 1.8 GHz
- Typical PAE3dB: 64.8 % at 1.8 GHz
- Operating voltage: 65V
- Low thermal resistance package
- CW and Pulse capable
- 7.2 x 6.6 mm package
The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an over-molded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz.
The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package.
Lead-free and ROHS compliant. Evaluation boards are available upon request.
特别应用
- Military Radar
- Commercial Radar
- Land Mobile and Military Radio Communications
- Active Antennas
- Base Stations
- Jammers
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 2,700 |
| 增益(dB) | 21.8 |
| PAE(%) | 64.8 |
| Vd(V) | 65 |
| Idq(mA) | 240 |
| 封装类型 | DFN |
| 封装(mm) | 7.2 x 6.6 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.