TGF2979-SM
DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor
关键性能
- Frequency range: DC - 12 GHz
- Output power (P3dB): 22 W at 9.4 GHz
- Linear gain: 11 dB typical at 9.4 GHz
- Typical PAE3dB: 45% at 9.4 GHz
- Operating voltage: 32V
- Low thermal resistance package
- CW and pulse capable
- 4 x 3 mm package
Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 4 x 3 mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant. Evaluation boards are available upon request.
特别应用
- Civilian Radar
- Military Radar
- Land Mobile Radio Communications
- Avionics
- Test Instrumentation
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 12,000 |
| 增益(dB) | 11 |
| Psat(dBm) | 43.4 |
| PAE(%) | 45 |
| Vd(V) | 32 |
| Idq(mA) | 150 |
| 封装类型 | QFN |
| 封装(mm) | 4 x 3 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.3.B.2 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.