TGF2954
DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT
Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz.
The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
特别应用
- Broadband Amplifiers
- High Efficiency Power Amplifiers
- Marine Radar
- Military Communications
- Point-to-point Communications
- Satellite Communications (Satcom)
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 12,000 |
| 增益(dB) | 19.6 |
| Psat(dBm) | 44.5 |
| PAE(%) | 71.6 |
| Vd(V) | 32 |
| Idq(mA) | 100 |
| 封装类型 | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.3.B.2 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.