TGF2936
DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor
End of Life announced March 24, 2021 (PCN 21-0070).
Last Time Buy: July 1, 2025
Recommended replacement for new designs: TGF2023-2-02
Contact your local sales representative for assistance.
提示： 从 Qorvo处购买的所有订单不接受取消和退款，敬请谅解。
关键性能
- Frequency Range: DC - 25 GHz
- Output Power (P3dB): 10 W at 10 GHz
- Linear Gain: 16 dB typical at 10 GHz
- Typical PAE3dB: 58% at 10 GHz
- Typical NF at 10 GHz: 1.3 dB
- Operating voltage: 28V
- CW and Pulse capable
- 0.98 x 0.55 x 0.10 die
The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations.
Lead-free and ROHS compliant.
特别应用
- Defense and Aerospace
- Broadband Wireless
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 25,000 |
| 增益(dB) | 16 |
| Psat(dBm) | 40 |
| PAE(%) | 58 |
| Vd(V) | 28 |
| Idq(mA) | 80 |
| 封装类型 | die |
| 封装(mm) | 0.98 x 0.55 x 0.10 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.3.B |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.