End of Life announced January 23, 2023 (PCN 23-0016).
Last Time Buy: June 30, 2026
Recommended replacement for new designs: T2G6001528-Q3
Contact your local sales representative for assistance.
提示: 从 Qorvo处购买的所有订单不接受取消和退款,敬请谅解。
Qorvo's T2G6001528-SG is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 6,000 |
| 增益(dB) | 15.5 |
| Psat(dBm) | 42 |
| 漏极效率(%) | 72 |
| Vd(V) | 28 |
| Idq(mA) | 100 |
| 封装类型 | NI-200 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.