T1G2028536-FL
DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor
Qorvo's T1G2028536-FL is a 285 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2 GHz.
The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
主要特性
- Frequency: DC to 2 GHz
- Output power (P3dB): 260 W at 1.2 GHz
- Linear gain: 18 dB at 1.2 GHz
- Operating voltage: 36 V
- Low thermal resistance package
典型应用
- Avionics
- Civilian Radar
- GPS
- Military Radar
- Professional and Military Radio
- Test Instrumentation
- Wideband and Narrowband Amplifiers
参数
技术文档
设计资源
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