QPD1035
DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant.
Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz.
特别应用
- Radar
- Communications
- Jammers
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 6,000 |
| 增益(dB) | 12.1 (Gain at P3dB) |
| Psat(dBm) | 47 (P3dB) |
| 漏极效率(%) | 52.2 |
| Vd(V) | 50 |
| Idq(mA) | 65 |
| 封装(mm) | 4.1 x 5.1 |