QPD1035L
DC - 6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor
The QPD1035L is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant.
Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz.
主要特性
- Frequency range: DC - 6 GHz
- Drain Voltage: 50 V
- Output Power (P3dB): 50 W
- Drain Efficiency (P3dB): 52.2%
- Linear Gain: 15.1dB
- Low thermal resistance package
典型应用
- Radar
- Communications
- Jammers
参数
技术文档
设计资源
相关解决方案
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