QPD1029L
1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor
The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
特别应用
- L-Band radar-amplifier application
| 频率最小值(MHz) | 1,200 |
| 频率最大值(MHz) | 1,400 |
| Psat(dBm) | 61.8 |
| PAE(%) | 75 |
| Vd(V) | 65 |
| Idq(mA) | 1,500 |
| 封装类型 | NI-1230 (Eared) |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |