QPD1016
DC - 1.7 GHz, 500 Watt, 50 Volt, GaN RF Transistor
The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations.
ROHS compliant.
Evaluation boards are available upon request.
主要特性
- Frequency Range: DC - 1.7 GHz
- Output Power (P3dB): 680 W at 1.3 GHz
- Linear Gain: 23.9 dB typical at 1.3 GHz
- Typical PAE3dB: 77.4% at 1.3 GHz
- Operating Voltage: 50 V
- Low Thermal Resistance Package
- CW and Pulse Capable
典型应用
- IFF
- Avionics
- Military and Civilian Radar
- Test Instrumentation
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记Modelithics Qorvo GaN Library
手册Qorvo Field-Proven GaN Solutions
手册
设计资源
相关解决方案
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