QPD1016
500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor
关键性能
- Frequency Range: DC - 1.7 GHz
- Output Power (P3dB): 680 W at 1.3 GHz
- Linear Gain: 23.9 dB typical at 1.3 GHz
- Typical PAE3dB: 77.4% at 1.3 GHz
- Operating Voltage: 50 V
- Low Thermal Resistance Package
- CW and Pulse Capable
The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations.
ROHS compliant.
Evaluation boards are available upon request.
特别应用
- IFF
- Avionics
- Military and Civilian Radar
- Test Instrumentation
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 1,700 |
| 增益(dB) | 23.9 |
| Psat(dBm) | 58.3 |
| PAE(%) | 77.4 |
| Vd(V) | 50 |
| Idq(mA) | 1,000 |
| 封装类型 | NI-780 |
| RoHS | Yes |
| Lead Free | No |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.