Data sheet available upon request.
Contact your local sales representative for assistance.
The QPD0011 is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 3.3 to 3.6 GHz. In each path is a single-stage amplifier transistor. QPD0011 can deliver an average power of 15 W in a Doherty configuration.
Lead free and RoHS compliant.
| 频率最小值(MHz) | 3,300 | 
| 频率最大值(MHz) | 3,600 | 
| 增益(dB) | 13.3 | 
| Psat(dBm) | 49.5 | 
| 漏极效率(%) | 48 | 
| Vd(V) | 48 | 
| Idq(mA) | 65 | 
| 封装类型 | DFN | 
| 封装(mm) | 7.0 x 6.5 | 
| RoHS | Yes | 
| Lead Free | Yes | 
| Halogen Free | Yes | 
| ITAR Restricted | No | 
| ECCN | EAR99 |