End of Life announced August 3, 2023 (PCN 23-0105).
Last Time Buy: February 17, 2024
Recommended replacement for new designs: QPB3810
Contact your local sales representative for assistance.
The QPD0009J is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 3.4 to 3.6 GHz. The device is a single-stage power amplifier transistor for Doherty application. QPD0009J can deliver peak Doherty output power 50.0 W at +48V operation.
Lead-free and RoHS compliant.
 
| 频率最小值(MHz) | 3,400 | 
| 频率最大值(MHz) | 3,600 | 
| 增益(dB) | 14 | 
| Psat(dBm) | 47 | 
| 漏极效率(%) | 54.5 | 
| Vd(V) | 48 | 
| Idq(mA) | 32.5 | 
| 测量条件 | 38.8 | 
| 封装类型 | DFN | 
| 封装(mm) | 7.0 x 6.5 | 
| RoHS | Yes | 
| Lead Free | Yes | 
| Halogen Free | Yes | 
| ITAR Restricted | No |