TGF2023-2-01
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT
Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.
主要特性
- Frequency range: DC to 18 GHz
- 38 dBm nominal Psat at 3 GHz
- 71.6% maximum PAE
- 18 dB nominal power gain at 3 GHz
- Bias: VD = 12 -32 V, IDQ = 125 mA
- Chip dimensions: 0.82 x 0.66 x 0.10 mm
典型应用
- Broadband Wireless
- Military
- Space
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记High-Performance Defense and Aerospace Solutions
手册Modelithics Qorvo GaN Library
手册Qorvo Field-Proven GaN Solutions
手册GaAs and GaN Die Assembly and Handling Procedures
白皮书
设计资源
相关解决方案
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