TGF2023-2-01
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT
Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.
特别应用
- Broadband Wireless
- Military
- Space
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 18,000 |
| 增益(dB) | 18 |
| Psat(dBm) | 38 |
| PAE(%) | 71.6 |
| Vd(V) | 12 to 32 |
| Idq(mA) | 25 to 125 |
| 封装类型 | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.