关键性能
- Frequency range: 9 - 10 GHz
- Pout: 43 dBm (PIN = 18 dBm)
- PAE: > 40 % (PIN = 18 dBm)
- Power gain: 25 dB (PIN = 18 dBm)
- Bias: VD = 28 V, IDQ = 365 mA, VG = -2.5 V typical (Pulsed: PW = 100 us, DC = 10%)
- Package dimensions: 7 x 7 x 1.75 mm
Qorvo's TGA2624-SM is a packaged, high power X-Band amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. Operating from 9-10GHz, the TGA2624-SM typically generates 20W of saturated output power with a power-added efficiency greater than 40% and 25dB of large signal gain.
The TGA2624-SM is packaged in a 7x7mm air-cavity, laminate based QFN. Both RF ports are internally DC blocked and matched to 50 ohms enabling simple system integration. Ideally suited for pulsed applications, the TGA2624-SM offers excellent power, PAE and gain performance that can save costs on existing platforms while enabling the development of future systems.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
特别应用
- Weather and Marine Radar
- EW Signal Jammers
- X Band Radar
- Repeaters / Boosters / DAS
| 频率最小值(GHz) | 9 |
| 频率最大值(GHz) | 10 |
| Pout(W) | 20 |
| 增益(dB) | > 34 |
| PAE(%) | > 40 |
| 电压(V) | 28 |
| 电流(mA) | 365 |
| 封装类型 | QFN |
| 封装(mm) | 7.0 x 7.0 x 1.75 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.b.2.b |