Qorvo's TGA2622-SM is a packaged, high power X-Band amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. Operating from 9-10GHz, the TGA2622-SM typically generates 35W of saturated output power with a power-added efficiency greater than 42% and 27.5dB of large signal gain.

The TGA2622-SM is packaged in a 7x7mm air-cavity, laminate based QFN. Both RF ports are internally DC blocked and matched to 50 ohms enabling simple system integration. Ideally suited for pulsed applications, the TGA2622-SM offers superior power, PAE and gain performance that can save costs on existing platforms while enabling the development of future systems.

Lead-free and RoHS compliant.

Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.