关键性能
- Frequency range: 2 - 6 GHz
- Psat: 45 dBm CW
- PAE: 40%
- IM3: -30 dBc @ 40 dBm Pout/Tone
- Small signal gain: 27 dB
- Input return loss: >20 dB
- Bias: Vd = 28 V, Idq = 400 mA, Vg = -2.8 V typical
- Chip dimensions: 6.4 x 5.0 x 0.10 mm
Qorvo's TGA2578 is a wideband power amplifier fabricated on Qorvo's 0.25um GaN on SiC process. Operating from 2 to 6 GHz, it achieves 30 W saturated output power with high efficiency of 40% PAE, and 27 dB small signal gain.
Fully matched to 50 ohms with integrated DC blocking caps on both I/O ports, the TGA2578 is ideally suited to support both commercial and defense related applications.
The TGA 2578 is 100% DC and RF tested on-wafer to ensure comliance to power and PAE specifications.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
特别应用
- Electronic Countermeasures (ECM)
- Electronic Warfare
- Point-to-Point Radio
- Radar
- Multi-Band VSAT
- Repeaters / Boosters / DAS
- Cellular Infrastructure Base Stations
| 频率最小值(GHz) | 2 |
| 频率最大值(GHz) | 6 |
| Pout(dBm) | 45 |
| Psat(dBm) | 45 |
| 增益(dB) | 27 |
| PAE(%) | 40 |
| 电压(V) | 28 |
| 电流(mA) | 400 |
| 封装类型 | Die |
| 封装(mm) | 6.4 x 5 x 0.10 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.b.2.a |