TGA2214
2 - 18 GHz, 5 Watt GaN Power Amplifier
Qorvo's TGA2214 is a wideband power amplifier fabricated on Qorvo's TQGaN15 GaN on SiC process. The TGA2214 operates from 2 - 18 GHz and achieves 5 W of saturated output power with 14 dB of large signal gain and greater than 20% power-added efficiency.
This combination of wideband power, gain and efficiency provides system designers the flexibility to improve system performance while reducing size and cost.
The TGA2214 is matched to 50 ohm with integrated DC blocking capacitors on both RF ports simplifying system integration; it is ideally suited for electronic warfare, test instrumentation and radar applications across both military and commercial markets.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
主要特性
- Frequency range: 2 - 18 GHz
- Pout: > 37 dBm at PIN = 23 dBm
- PAE: > 20 % at Pin = 23 dBm
- Large signal gain (PIN = 23 dBm): > 14 dB
- Small signal gain: > 22 dB
- Return Loss: > 7 dB
- Bias: VD = 22 V, IDQ = 450 mA, VG = -2.3 V typical
- Chip dimensions: 3 x 5 x 0.10 mm
- Performance under CW operation
典型应用
- Electronic Warfare
- Military Radar
- Test Equipment
- Multi-Band VSAT
- EW Signal Jammer
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记RF Test and Measurement Solutions
手册GaAs and GaN Die Assembly and Handling Procedures
白皮书
设计资源
相关解决方案
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