关键性能
- Frequency range: 2 - 18 GHz
- Pout: > 37 dBm at PIN = 23 dBm
- PAE: > 20 % at Pin = 23 dBm
- Large signal gain (PIN = 23 dBm): > 14 dB
- Small signal gain: > 22 dB
- Return Loss: > 7 dB
- Bias: VD = 22 V, IDQ = 450 mA, VG = -2.3 V typical
- Chip dimensions: 3 x 5 x 0.10 mm
- Performance under CW operation
Qorvo's TGA2214 is a wideband power amplifier fabricated on Qorvo's TQGaN15 GaN on SiC process. The TGA2214 operates from 2 - 18 GHz and achieves 5 W of saturated output power with 14 dB of large signal gain and greater than 20% power-added efficiency.
This combination of wideband power, gain and efficiency provides system designers the flexibility to improve system performance while reducing size and cost.
The TGA2214 is matched to 50 ohm with integrated DC blocking capacitors on both RF ports simplifying system integration; it is ideally suited for electronic warfare, test instrumentation and radar applications across both military and commercial markets.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
特别应用
- Electronic Warfare
- Military Radar
- Test Equipment
- Multi-Band VSAT
- EW Signal Jammer
| 频率最小值(GHz) | 2 |
| 频率最大值(GHz) | 18 |
| Pout(dBm) | > 37 |
| 增益(dB) | > 22 |
| PAE(%) | > 20 |
| 电压(V) | 22 |
| 电流(mA) | 450 |
| 封装类型 | Die |
| 封装(mm) | 3.0 x 5.0 x 0.10 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.2.B |