QPD2560L
300W, 1-1.5 GHz, GaN on SiC RF Transistor
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency.
Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.
Evaluation boards are available upon request.
特别应用
- L-Band Radar
- ISM
- Communications
- Electronic Warfare
| 频率最小值(MHz) | 1,000 |
| 频率最大值(MHz) | 1,500 |
| 增益(dB) | 15 |
| Psat(dBm) | 55.4 |
| 漏极效率(%) | 65 |
| Vd(V) | 50 |
| Idq(mA) | 440 |
| 封装类型 | NI-650 |
| 封装(mm) | 29.00 x 5.84 |