QPD1823
1.8 - 2.4 GHz, 220 Watt, 48 V GaN RF Power Transistor
End of Life announced March 2, 2021 (PCN 21-0056).
Last Time Buy: September 13, 2021
Contact your local sales representative for assistance.
Qorvo's QPD1823 is a discrete GaN on SiC HEMT which operates from 1.8-2.4 GHz. The device is a single stage matched power amplifier transistor.
The QPD1823 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD1823 can deliver PSAT of 227 W at 48 V operation.
Lead-free and ROHS compliant.
特别应用
- Active Antennas
- Micro Cell Base Station
- Macro Cell Base Station
- Wireless Communications
| 频率最小值(MHz) | 1,800 |
| 频率最大值(MHz) | 2,400 |
| 增益(dB) | 24 |
| Psat(dBm) | 53.6 |
| PAE(%) | 80 |
| Vd(V) | 48 |
| Idq(mA) | 360 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.