QPD1000A

    15W, 30-1215 MHz, GaN RF Input-Matched Transistor

    关键性能

    • Frequency range: 30 - 1215 MHz
    • Drain Voltage: 28 V
    • Output Power (P3dB): 24 W at 1 GHz, load pull data
    • PAE (P3dB): 78% at 1 GHz, load pull data
    • Input matched to 50 Ohms
    • Low thermal resistance package
       
    QPD1000A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1215 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios.

    特别应用

      • Military Radar
      • Civilian Radar
      • Land mobile and military radio communications
      • Test instrumentation
      • Wideband or narrowband amplifiers
      • Jammers
       
    频率最小值(MHz) 50
    频率最大值(MHz) 1,000
    类型 Input-Matched
    增益(dB) 16
    Psat(dBm) 40.4
    PAE(%) 60
    Vd(V) 28
    封装类型 QFN
    封装(mm) 6.0 x 5.0 x 0.85

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