关键性能
- Frequency Range: 2 - 20 GHz
- PSAT (PIN=18 dBm): 34 dBm
- PAE (PIN=18 dBm): 23 %
- Power Gain (PIN=18 dBm): 16 dB
- Small Signal Gain: 25 dB
- Noise Figure: 4.0 dB
- Bias: VD = 18 V, IDQ = 330 mA, PIN = 18 dBm
- Package Dimensions: 2.75 x 2.75 x 0.10 mm
Notes:
1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 C)
2. Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Qorvo’s QPA2213D is a wide band driver amplifier MMIC fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 2.0 - 20.0 GHz, the QPA2213D provides > 2 W of saturated output power and 16 dB of large-signal gain while achieving > 23% power added efficiency.
The QPA2213D MMIC dimensions are 2.75 x 2.75 x 0.10 mm. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages.
The QPA2213D has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA2213D is ideal for both commercial and military wide band or narrow band systems.
Lead-free and RoHS compliant.
特别应用
- Military Radar
- Civilian Radar
| 频率最小值(GHz) | 2 |
| 频率最大值(GHz) | 20 |
| Pout(dBm) | 34 |
| 增益(dB) | 16 |
| PAE(%) | 23 |
| 电压(V) | 18 |
| 电流(mA) | 330 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |