QPA1009D
10.7 - 12.7 GHz, 17.5 Watt GaN Amplifier
Qorvo's QPA1009D is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 – 12.7 GHz, the QPA1009D provides > 17.5 Watts of saturated output power and 17 dB of large-signal gain while achieving > 40% power-added efficiency.
The QPA1009D RF input port is DC coupled to ground for optimum ESD performance. The QPA1009D RF ports have DC blocking capacitors and are matched to 50 ohms.
The QPA1009D can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
主要特性
- Frequency Range: 10.7 - 12.7 GHz
- PSAT (PIN=27 dBm): > 43.5 dBm
- PAE (PIN=27 dBm): > 40 %
- Power Gain (PIN=27 dBm): > 17 dB
- Small Signal Gain: > 22 dB
- Bias: VD = 20 V, IDQ = 600 mA
- Die Dimensions: 3.16 x 4.24 x 0.10 mm
典型应用
- Satellite Communications
- Radar
- Point to Point Communications
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记Qorvo Field-Proven GaN Solutions
手册GaAs and GaN Die Assembly and Handling Procedures
白皮书
设计资源
相关解决方案
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