CMD219
4-8 GHz (C Band) GaN Low Noise Amplifier MMIC
End of Life announced August 10, 2021 (PCN 21-0163).
Last Time Buy: February 21, 2022
Limited stock quantity.
关键性能
- High gain
- High linearity
- High RF power survivability
- Low noise figure
- Positive gain slope
- Small die size
Qorvo's CMD219 is a broadband GaN MMIC low noise amplifier ideally suited for microwave radios and C band applications where small size and high input power survivability are critical design requirements. The broadband device delivers greater than 23 dB of gain with a corresponding output 1 dB compression point of +18 dBm and a noise figure of 1 dB. The CMD219 LNA MMIC features an RF input power survivability of greater than 5 Watts. The CMD219 is a 50 ohm matched design eliminating the need for external DC blocks and RF port matching.
特别应用
- Electronic Warfare (EW)
- C Band Radar
- Space
- Satellite Communications (Satcom)
- Phased Arrays
| 频率最小值(GHz) | 4 |
| 频率最大值(GHz) | 8 |
| 增益(dB) | 23 |
| NF(dB) | 1 |
| OP1dB(dBm) | 18 |
| OIP3(dBm) | 28 |
| 电压(V) | 5 to 28 |
| 电流(mA) | 75 |
| 封装类型 | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Keysight Model Library
This product is included in our Keysight PathWave System Design (SystemVue) and PathWave RF Synthesis (Genesys) compatible component libraries.