TGA2222

    32 - 38 GHz 10 Watt GaN Amplifier

    关键性能

    • Frequency Range: 32 – 38 GHz
    • PSAT (PIN = 24 dBm): > 40 dBm
    • PAE (PIN = 24 dBm): > 22 %
    • Power Gain (PIN = 24 dBm): > 16 dB
    • Small Signal Gain: > 25 dB
    • Bias (pulsed): VD = 26 V, IDQ = 640 mA
    • Bias (CW): VD = 24 V, IDQ = 640 mA
    • Die Dimensions: 3.43 x 2.65 x 0.05 mm

    Military Embedded Systems - Best in Show Award - IMS 2019

    Qorvo's TGA2222 is a wide band power amplifier MMIC fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 32 - 38 GHz, the TGA2222 provides 40 dBm (10 W) of saturated output power and 16 dB of large-signal gain while achieving > 22% power-added efficiency.

    The TGA2222 employs a balanced architecture to minimize performance sensitivity to load variation. Its RF ports are DC coupled to ground for optimum ESD performance.

    The TGA2222 has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The TGA2222 can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems.

    Lead-free and RoHS compliant.

    For additional information on GaN thermal performance refer to the following application note and video.

    特别应用

      • Communications
      • Radar
      • Satcom
      • EW
      • Space communications
      • Point to point communications
    频率最小值(GHz) 32
    频率最大值(GHz) 38
    Pout(dBm) 40
    Psat(dBm) 40
    增益(dB) 16
    PAE(%) 22
    电压(V) 26
    封装(mm) 3.43 x 2.65 x 0.05
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001.B.2.D

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