QPD1028
1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor
The QPD1028 is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency.
Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.
Evaluation boards are available upon request.
主要特性
- Operating Frequency Range: 1.2 - 1.4 GHz
- Saturated Output Power PSAT: 59dBm
- Drain Efficiency at PSAT: 70%
- Large Signal Gain at PSAT: 18 dB
- Bias: VDS=+65V, IDQ=750mA
- Package Type: NI-780
- Package Dimensions: 20.57 x 9.78 x 3.63 mm
典型应用
- L-Band Radar
- ISM
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记Application Note: Understanding Thermal Analysis of RF Devices
应用笔记High-Performance Defense and Aerospace Solutions
手册
设计资源
相关解决方案
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