关键性能
- Operating Frequency Range: DC - 5.0 GHz
- Operating Drain Voltage: +48 V
- Maximum Output Power (P3dB) at 3.5 GHz: 20 W
- Maximum Drain Efficiency at 3.5 GHz: 73%
- Efficiency-Tuned Back Off Gain at 3.5 GHz: 19 dB
- 4.5 x 4.0 mm DFN Package
The QPD0007 is a single-path discrete GaN on SiC HEMT in a DFN package which operates from DC to 5 GHz. It is a single-stage, unmatched transistor capable of delivering P3dB of 20W at +48 V operation.
Lead free and RoHS compliant.
特别应用
- WCDMA / LTE
- Macrocell Base Station
- Microcell Base Station
- Small Cell
- Active Antenna
- 5G Massive MIMO
- General Purpose Applications
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 5,000 |
| 增益(dB) | 19 |
| Psat(dBm) | 43 |
| 漏极效率(%) | 73 |
| Vd(V) | 48 |
| Idq(mA) | 32.5 |
| 封装类型 | DFN |
| 封装(mm) | 4.5 x 4.0 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 5A991G |