QPB1006
2 - 7.5 GHz, 150 Watt Spatium GaN High Power Amplifier
关键性能
- High RF Power Output
- 2-7.5 GHz Bandwidth
- High RF Combining Efficiency
- Solid State Reliability
- Reduced SWaP
The QPB1006 is a high power connectorized SSPA module with bias circuit card suitable for installation into OEM assemblies. The amplifier requires +28 Volts DC and customer supplied thermal management. The device is an excellent candidate for high power test equipment, communications, jamming applications, or any application requiring capability for simultaneous power amplification of signals across the 2.0 – 7.5 GHz spectrum.
The QPB1006 incorporates Qorvo high efficiency GaN MMICs, spatially combined in a compact structure to achieve robust, high performance power amplification across the 2.0 – 7.5 GHz frequency range.
The included bias circuit card assembly provides and sequences all required DC voltages from a single customer supplied +28 volt input. Mute and pulse functionality, as well as a summary fault output are available. Individual device current monitoring in analog format is also available.
特别应用
- Jamming
- Radar
- Military Communications
- Defense Communications
- Test & Measurement
- EMI Testing
| 频率最小值(GHz) | 2.0 |
| 频率最大值(GHz) | 7.5 |
| Psat(W) | 150 |
| 功率增益(dB) | 22 |
| 小信号增益(dB) | 30 |
| 功率(dBm) | 52 |
| PAE(%) | 25 |
| 电压(V) | 28 |
| RoHS | Yes |
| Lead Free | No |
| Halogen Free | No |
| ITAR Restricted | No |
| ECCN | 3A001.b.4.b.1 |