关键性能
- On-resistance RDS(on): 410 mohm (typ)
- Operating temperature: 175 °C (max)
- Excellent reverse recovery: Qrr = 70 nC
- Low body diode VFSD: 1.5 V
- Low gate charge: QG = 23.1 nC
- Low intrinsic capacitance
- ESD protected: HBM class 2 and CDM class C3
Qorvo's UF3C170400B7S SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.
特别应用
- Switching Power Supplies
- Auxiliary Power Supplies
- Load Switches
| VDS 最大值(V) | 1,700 |
| RDS(on) 典型值 @ 25C(mohm) | 410 |
| ID 最大值(A) | 7.6 |
| 代 | Gen 3 |
| Tj 最大值(°C) | 175 |
| 车规级认证 | Yes |
| 封装类型 | D2PAK-7L |
| RoHS | Yes |
| Lead Free | No |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
这个产品出现在以下的应用框图中: