TGF2018
DC - 20 GHz, 180 um Discrete GaAs pHEMT Die
End of Life announced May 5, 2020 (PCN 20-0054).
Last Time Buy: November 14, 2021
Contact your local sales representative for assistance.
Qorvo's TGF2018 is a discrete 180-Micron pHEMT which operates from DC to 20 GHz. The TGF2018 is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression. This performance makes the TGF2018 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Lead-free and RoHS compliant.
特别应用
- Aerospace
- Broadband Wireless
- Commercial
- Defense
- High Reliability
- Test and Measurement
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 20,000 |
| 增益(dB) | 14 |
| OP1dB(dBm) | 22 |
| Psat(dBm) | 22 |
| NF(dB) | 1 |
| PAE(%) | 55 |
| Vd(V) | 8 |
| Idq(mA) | 29 |
| 封装类型 | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |