TGS2355-SM
0.5 - 6 GHz, 100 Watt, High Power GaN Switch
关键性能
- Frequency range: 0.5 - 6 GHz
- Insertion loss: < 1.1 dB
- Power handling: 100 W (Pulsed)
- Return loss: > 15 dB
- Isolation: 40 dB typical
- Control voltages: 0 V/-40 V from either side of the MMIC
- Switching speed: < 50 ns
- Reflective switch
- Dimensions: 5.0 x 5.0 x 1.42 mm
Qorvo's TGS2355–SM is a Single-Pole, Double–Throw (SPDT) reflective switch fabricated on Qorvo’s QGaN25 0.25um GaN on SiC production process.
Operating from 0.5 to 6GHz, the TGS2355–SM typically supports up to 100W input power (pulsed) handling at control voltages of 0/−40 V. This switch maintains low insertion loss of 1.1 dB or less and greater than 40 dB isolation, making it ideal for high power switching applications across both defense and commercial platforms.
The TGS2355–SM is offered in a 5 x 5 mm air-cavity QFN package comprised of an aluminum-nitride base with a LCP epoxy-sealed lid. This, along with the minimal DC power consumption, allows for easy system integration.
Lead-free and RoHS compliant.
Evaluation boards available on request.
特别应用
- Commercial Radar
- Electronic Warfare
- High Power Switching
- Military Radar
| 开关类型 | SPDT |
| 频率最小值(MHz) | 500 |
| 频率最大值(MHz) | 6,000 |
| 插入损耗(dB) | < 1.1 |
| 隔离(dB) | 40 |
| 开关速度(ns) | < 50 |
| OP0.1dB(dBm) | 50 |
| 封装类型 | QFN |
| 封装(mm) | 5.0 x 5.0 x 1.42 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |