TGS2355-SM
0.5 - 6 GHz, 100 Watt, High Power GaN Switch
Qorvo's TGS2355–SM is a Single-Pole, Double–Throw (SPDT) reflective switch fabricated on Qorvo's QGaN25 0.25um GaN on SiC production process.
Operating from 0.5 to 6GHz, the TGS2355–SM typically supports up to 100W input power (pulsed) handling at control voltages of 0/-40 V. This switch maintains low insertion loss of 1.1 dB or less and greater than 40 dB isolation, making it ideal for high power switching applications across both defense and commercial platforms.
The TGS2355–SM is offered in a 5 x 5 mm air-cavity QFN package comprised of an aluminum-nitride base with a LCP epoxy-sealed lid. This, along with the minimal DC power consumption, allows for easy system integration.
Lead-free and RoHS compliant.
Evaluation boards available on request.
主要特性
- Frequency range: 0.5 - 6 GHz
- Insertion loss: < 1.1 dB
- Power handling: 100 W (Pulsed)
- Return loss: > 15 dB
- Isolation: 40 dB typical
- Control voltages: 0 V/-40 V from either side of the MMIC
- Switching speed: < 50 ns
- Reflective switch
- Dimensions: 5.0 x 5.0 x 1.42 mm
典型应用
- Commercial Radar
- Electronic Warfare
- High Power Switching
- Military Radar
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记High-Performance Defense and Aerospace Solutions
手册Qorvo Field-Proven GaN Solutions
手册
设计资源
相关解决方案
Need more support?
At Qorvo, our customers are a core part of what we do, and we want every experience you have with us to be as reliable as our products. If you have a question or if something isn't working the way you expect, please let us know.
Forum
Engage with the Qorvo community, ask technical questions and share insights.
Support
Get technical, application or customer support plus updates on supply chain and FAQs.
Sales
Connect with our sales team to gain tailored solutions, expert guidance and access to the latest technologies.
