T1G6001032-SM
DC - 6 GHz, 10 Watt, 32 V GaN RF Power Transistor
End of Life announced Nov 3, 2017 (PCN 17-0186).
Last Time Buy May 7, 2018.
Please use QPD1022 for new designs.
Contact your local sales representative for assistance.
Qorvo's T1G6001032-SM is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC - 6GHz and a 32V supply rail. The device is in an air cavity QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
特别应用
- Civilian Radar
- Jammers
- Military Radar
- Professional and Military Radio
- Test Instrumentation
- Wideband and Narrowband Amplifiers
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 6,000 |
| 增益(dB) | 19 |
| Psat(dBm) | 40 |
| 漏极效率(%) | 55 |
| Vd(V) | 32 |
| Idq(mA) | 50 |
| 封装类型 | QFN |
| 封装(mm) | 5 x 5 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.