TGF3020-SM
4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor
Qorvo's TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
主要特性
- Frequency range: 4 - 6 GHz
- Output power (P3dB): 6.8W at 5GHz
- Linear gain: 12.7 dB typical at 5 GHz
- Typical PAE3dB: 59.6% at 5 GHz
- Operating voltage: 32V
- Low thermal resistance package
- CW and pulse capable
- 3 x 3 mm package
典型应用
- 5.8 GHz ISM
- C-Band Radar
- Communication Systems
- Telemetry
- Test Instrumentation
- Wideband Power Amplifiers
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记Application Note: Understanding Thermal Analysis of RF Devices
应用笔记High-Performance Defense and Aerospace Solutions
手册Modelithics Qorvo GaN Library
手册Qorvo Field-Proven GaN Solutions
手册
设计资源
相关解决方案
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