TGF3015-SM
0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor
关键性能
- Frequency range: 30 MHz - 3.0 GHz
- Output power (P3dB): 11W at 2.4 GHz
- Linear gain: 17.1 dB typical at 2.4 GHz
- Typical PAE3dB: 62.7% at 2.4 GHz
- Operating voltage: 32V
- Low thermal resistance package
- CW and pulse capable
- 3 x 3 mm package
Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
The device is housed in an industry-standard 3 x 3 mm package that saves real estate of already space-constrained handheld radios.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
特别应用
- Civilian Radar
- Jammers
- Land Mobile Radio Communications
- Military Radar
- Test Instrumentation
- Wideband and Narrowband Amplifiers
| 频率最小值(MHz) | 30 |
| 频率最大值(MHz) | 3,000 |
| 增益(dB) | 17 |
| Psat(dBm) | 40.4 |
| PAE(%) | 63 |
| Vd(V) | 32 |
| Idq(mA) | 50 |
| 封装类型 | QFN |
| 封装(mm) | 3 x 3 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.