TGF3015-SM
0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor
Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
The device is housed in an industry-standard 3 x 3 mm package that saves real estate of already space-constrained handheld radios.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
主要特性
- Frequency range: 30 MHz - 3.0 GHz
- Output power (P3dB): 11W at 2.4 GHz
- Linear gain: 17.1 dB typical at 2.4 GHz
- Typical PAE3dB: 62.7% at 2.4 GHz
- Operating voltage: 32V
- Low thermal resistance package
- CW and pulse capable
- 3 x 3 mm package
典型应用
- Civilian Radar
- Jammers
- Land Mobile Radio Communications
- Military Radar
- Test Instrumentation
- Wideband and Narrowband Amplifiers
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记Application Note: Understanding Thermal Analysis of RF Devices
应用笔记Modelithics Qorvo GaN Library
手册Qorvo Field-Proven GaN Solutions
手册
设计资源
相关解决方案
Need more support?
At Qorvo, our customers are a core part of what we do, and we want every experience you have with us to be as reliable as our products. If you have a question or if something isn't working the way you expect, please let us know.
Forum
Engage with the Qorvo community, ask technical questions and share insights.
Support
Get technical, application or customer support plus updates on supply chain and FAQs.
Sales
Connect with our sales team to gain tailored solutions, expert guidance and access to the latest technologies.
