TGF2955
DC - 12 GHz, 40 Watt Discrete Power GaN on SiC HEMT
Qorvo's TGF2955 is a discrete 7.56 mm GaN on SiC HEMT which operates from DC-12 GHz.
The TGF2955 typically provides 46.4 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 69.0 % which makes the TGF2955 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
Last Time Buy: October 4, 2021
Recommended replacement for new designs: TGF2023-2-10
Contact your local sales representative for assistance.
主要特性
- Frequency range: DC - 12 GHz
- 46.4dBm nominal Psat at 3 GHz
- 69% maximum PAE at 3 GHz
- 19.2dB nominal power gain at 3 GHz
- Bias: Vd = 32V, Idq = 150mA
- Chip dimensions: 0.82 x 2.31 x 0.10 mm
典型应用
- Broadband Amplifiers
- High Efficiency Power Amplifiers
- Marine Radar
- Military Communications
- Point-to-point Communications
- Satellite Communications (Satcom)
参数
技术文档
Product Data Sheet
数据手册Application Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记Modelithics Qorvo GaN Library
手册Qorvo Field-Proven GaN Solutions
手册GaAs and GaN Die Assembly and Handling Procedures
白皮书
设计资源
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