TGF2929-FL
DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor
Qorvo's TGF2929-FL is a 100 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant. Evaluation boards are available upon request.
主要特性
- Frequency range: DC - 3.5 GHz
- Output power (P3dB): 107W at 3.5 GHz
- Linear gain: 14 dB minimum at 3.5 GHz
- Minimum PAE3dB: 50% at 3.5 GHz
- Operating voltage: 28V
- Low thermal resistance package
- CW and pulse capable
- Ceramic package
典型应用
- Civilian Radar
- Jammers
- Military Radar
- Professional and Military Radio
- Test Instrumentation
- Wideband and Narrowband Amplifiers
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记High-Performance Defense and Aerospace Solutions
手册Modelithics Qorvo GaN Library
手册Qorvo Field-Proven GaN Solutions
手册
设计资源
相关解决方案
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