TGF2819-FL
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor
The Qorvo TGF2819-FL is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
特别应用
- Military Radar
- Civilian Radar
- Professional and Military Radio Communications
- Test Instrumentation
- Wideband or Narrowband Amplifiers
- Jammers
| 频率最小值(MHz) | DC |
| 频率最大值(MHz) | 4,000 |
| 增益(dB) | > 14 |
| Psat(dBm) | 51 |
| Vd(V) | 50 |
| Idq(mA) | 250 |
| 封装类型 | NI-360 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.