TGF2023-2-10
DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT
Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz.
The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power gain of 19.8 dB at 3 GHz. The maximum power added efficiency is 69.5% which makes the TGF2023-2-10 appropriate for high efficiency applications.
The part is lead-free and RoHS compliant.
主要特性
- Frequency range: DC to 14 GHz
- 47.4 dBm nominal Psat at 3 GHz
- 69.5% maximum PAE
- 19.8 dB nominal power gain
- Bias: VD = 12 to 32 V, IDQ = 200 - 1000 mA
- Chip dimensions: 0.82 x 2.48 x 0.10 mm
典型应用
- Broadband Wireless
- Military
- Space
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记Application Note: Understanding Thermal Analysis of RF Devices
应用笔记High-Performance Defense and Aerospace Solutions
手册Modelithics Qorvo GaN Library
手册Qorvo Field-Proven GaN Solutions
手册GaAs and GaN Die Assembly and Handling Procedures
白皮书
设计资源
相关解决方案
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