TGA4516
30 - 40 GHz, 2 Watt Ka Band Power Amplifier
关键性能
- 30 to 40 GHz bandwidth
- > 33 dBm nominal Psat @ Pin = 20dBm
- 18 dB nominal gain
- Bias: 6 V, 1050 mA Idq (1.9 A under RF Drive)
- 0.15 um 3MI pHEMT technology
- Chip dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004 in)
Qorvo's TGA4516 is a high power amplifier (HPA) MMIC for Ka band applications. The part is designed using Qorvo's 0.15um power pHEMT process. The small chip size is achieved by utilizing Qorvo's 3 metal layer interconnect (3MI) design technology that allows compaction of the design over competing products. The TGA4516 provides > 33 dBm saturated output power and has typical gain of 18 dB at a bias of 6 V and 1050 mA (Idq). The current rises to 1. 9A under RF drive.
This HPA is ideally suited for many applications such as military radar systems, Ka band satellite communications, and point-to-point radios.
The TGA4516 is 100% DC and RF tested on-wafer to ensure performance compliance. The part is lead-free and RoHS compliant.
特别应用
- Ka Band Satellite Communications (Satcom)
- Military Radar
- Point-to-Point Radio
| 频率最小值(GHz) | 30 |
| 频率最大值(GHz) | 40 |
| Pout(W) | 2 |
| 增益(dB) | 18 |
| 电压(V) | 6 |
| 电流(mA) | 1,050 |
| 封装类型 | Die |
| 封装(mm) | 2.79 x 2.32 x 0.1 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.2.D |