TGA2976-SM

    0.1 - 3.0 GHz, 10 Watt GaN Power Amplifier

    关键性能

    • Frequency range: 0.1-3.0 GHz
    • PSat: >40 dBm @ PIN=27 dBm
    • PAE: 48% (midband)
    • Large signal gain: >13 dB
    • Small signal gain: >20 dB
    • Input return loss: >5 dB
    • Output return loss: >9 dB
    • Bias: VD = 40 - 50 V, IDQ = 360 mA, VG1 = -2.4 V typical, VG2 = +17.7 V typical
    • Wideband flat gain and power
    • Dimensions: 4.0 x 4.0 x 1.64 mm

    Qorvo's TGA2976-SM is a wideband cascode amplifier that offers exceptional wideband performance as well as supporting 40-50V operation. The TGA2976-SM operates from 0.1 - 3.0 GHz and provides greater than 10 W of saturated output power with greater than 13dB of large signal gain and greater than 38% power-added efficiency.

    The TGA29766-SM is available in a low-cost, surface mount 14 lead 4x4 Air Cavity laminate package. It is ideally suited to support both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2976-SM is fully matched to 50 ohms at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port.

    Lead-free and RoHS compliant. Evaluation Boards are available upon request.

    For additional information on GaN thermal performance refer to the following application note and video.

    特别应用

      • Commercial Radar
      • Communication Systems
      • Electronic Warfare
      • Military Radar
    频率最小值(GHz) 0.1
    频率最大值(GHz) 3
    Psat(dBm) > 40
    增益(dB) > 20
    PAE(%) 48
    电压(V) 40 to 50
    电流(mA) 360
    封装类型 QFN
    封装(mm) 4.0 x 4.0 x 1.64
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

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