TGA2814-CP
3.1 - 3.6 GHz, 80 Watt GaN Power Amplifier
Qorvo's TGA2814-CP is a packaged high-power S-Band amplifier fabricated on Qorvo's QGaN25 0.25 um GaN on SiC process. Operating from 3.1 to 3.6 GHz, the TGA2814-CP achieves 80 W saturated output power, a power-added efficiency of 50%, and power gain of 23 dB.
The TGA2814-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both short and long pulse conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration.
The TGA2814-CP is ideally suited for both commercial and defense applications.
For additional information on GaN thermal performance refer to the following application note and video.
主要特性
- Frequency range: 3.1 – 3.6 GHz
- Pout: 49 dBm (at PIN = 27 dBm)
- Power gain: 23 dB (at PIN = 27 dBm)
- PAE: 50% Pulsed
- Bias: VD = 30 V, IDQ = 200 mA, VG = -3 V typical, pulsed (PW = 15 ms, DC = 30 %)
- Package dimensions: 15.2 x 15.2 x 3.5 mm
- Package base is pure Cu offering superior thermal management
典型应用
- Radar
- Multi-Band VSAT
- Point-to-Point Radio
- Cellular Infrastructure Base Stations
- EW Signal Jammers
参数
技术文档
Product Data Sheet
数据手册Application Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记Application of Arctic Silver 5 Thermal Compound and Indium Shims for Qorvo CP-style Packaged Components
应用笔记Qorvo Field-Proven GaN Solutions
手册
设计资源
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