TGA2623-CP
10 - 11 GHz, 32 Watt GaN Power Amplifier
关键性能
- Frequency range: 10 – 11 GHz
- Pout: 45 dBm (PIN = 18 dBm)
- PAE: > 41 % (PIN = 18 dBm)
- Power gain: 27 dB (PIN = 18 dBm)
- Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical (Pulsed: PW = 100 us, DC = 10%)
- Package dimensions: 15.2 x 15.2 x 3.5 mm
- Package base is pure Cu offering superior thermal management
Qorvo's TGA2623-CP is a packaged, high-power X-Band amplifier fabricated on Qorvo's TQGaN25 0.25 um GaN on SiC production process. Operating from 10 to 11 GHz, the TGA2623-CP achieves 32 W saturated output power, a power-added efficiency of greater than 41 %, and power gain of 27 dB.
The TGA2623-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both pulsed and CW conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration.
The TGA2623-CP is ideally suited for both commercial and defense applications.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
特别应用
- X Band Radar
- EW Signal Jammers
- Repeaters / Boosters / DAS
| 频率最小值(GHz) | 10 |
| 频率最大值(GHz) | 11 |
| Pout(W) | 32 |
| 增益(dB) | 30 |
| PAE(%) | > 41 |
| OIP3(dBm) | N/A |
| 电压(V) | 28 |
| 电流(mA) | 290 |
| 封装类型 | Flange |
| 封装(mm) | 15.2 x 15.2 x 3.5 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.2.B.2 |