TGA2576-2-FL
2.5 - 6 GHz, 40 Watt GaN Power Amplifier
Qorvo's TGA2576-2-FL is a wideband power amplifier fabricated on Qorvo's proven 0.25um GaN on SiC production technology. Operating from 2.5 to 6 GHz, the TGA2576-2-FL achieves 40W of saturated output power, greater than 36% power-added efficiency and 29dB small signal gain.
For ideal thermal management and handling, the TGA2576-2-FL is offered in a CuW-based flanged packaged and can operate in both CW and pulsed modes.
Fully matched to 50 ohm and with integrated DC blocking caps on both I/O ports, the TGA2576-2-FL is ideally suited to support a variety of commercial and defense related applications.
Lead-free and RoHS compliant.
Evaluation Boards are available up on request.
For additional information on GaN thermal performance refer to the following application note and video.
主要特性
- Frequency range: 2.5 - 6 GHz
- Psat @ Pin = 26 dBm: 46.5 dB CW
- PAE @ Pin = 26 dBm: 36% CW
- Small signal gain: 29 dB
- Bias: Vd = 30 V, Idq = 1550 mA, Vg = -2.5 V typical
- Dimensions: 11.4 x 17.3 x 3.0 mm
典型应用
- Communication Systems
- Electronic Warfare
- Radar
- Test Instrumentation
- Multi-Band VSAT
- Point-to-Point Radio
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记High-Performance Defense and Aerospace Solutions
手册Qorvo Field-Proven GaN Solutions
手册Bill of Materials
物料清单
设计资源
相关解决方案
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