TGA2307-SM
5.0 - 6.0 GHz, 50 Watt GaN Power Amplifier
关键性能
- Frequency range: 5.0 to 6.0 GHz
- Output power (PIN = 27 dBm): > 47 dBm
- Power added efficiency (PIN = 27 dBm): > 44.4 %
- Small signal gain: > 26 dB
- Input return loss: > 17 dB
- Large signal gain (PIN = 27 dBm): > 20 dB
- Bias condition: VD = 28 V, IDQ = 500 mA
- Pulsed operation
- Plastic overmold QFN package
- Package dimensions: 6.00 x 6.00 x 0.85 mm
Qorvo's TGA2307-SM is a packaged power amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. Operating from 5.0-6.0 GHz, the TGA2307-SM produces greater than 47 dBm of saturated output power with a power-added efficiency greater than 44% and a large signal gain greater than 20 dB.
The TGA2307-SM is offered in a 6 x 6 mm plastic overmold QFN to support low cost board assembly techniques. In addition, the package uses a copper alloy base that offers superior thermal management. With both RF ports fully matched to 50 ohms with integrated DC blocking capacitors, the TGA2307 is ideally suited to support both commercial and military applications.
Lead-free and RoHS compliant.
Evaluation Boards available on request.
特别应用
- C-Band Radar
- Satellite Communications (Satcom)
- Multi-Band VSAT
- Cellular Infrastructure Base Station
- Repeaters / Boosters / DAS
- Point-to-Point Radio
| 频率最小值(GHz) | 5 |
| 频率最大值(GHz) | 6 |
| Pout(dBm) | > 47 |
| 增益(dB) | > 26 |
| PAE(%) | > 44.4 |
| 电压(V) | 28 |
| 电流(mA) | 500 |
| 封装类型 | QFN |
| 封装(mm) | 6.0 x 6.0 x 0.85 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.2.A.4 |