关键性能
- Frequency range: 13.4 - 16.5 GHz
- PSat: 44 dBm @ Pin = 16 dBm
- PAE: >31 % @ Pin = 16 dBm
- Large signal gain: 28 dB @ Pin = 16 dBm
- Small signal gain: >30 dB
- Input return loss: >15 dB
- Output return loss: >5 dB
- Bias: Vd = 28 V, Idq = 450 mA, Vg = -2.7 V typical
- Package base is pure Cu offering superior thermal management
- Process technology: TQGaN15
- Package dimensions: 15.2 x 15.2 x 3.5 mm
Qorvo's TGA2219-CP is a 3-stage, 25 W power amplifier operating over the 13.4 to 16.5 GHz band. Fabricated on Qorvo's production 0.15um GaN on SiC technology, this high performance amplifier offers > 30dB small-signal gain with 31% PAE, allowing the system designer to achieve superior performance levels in a cost efficient manner.
The TGA2219-CP is offered in a 10-lead 15 x 15 mm bolt-down package. Assembled with a pure-copper base, coupled with its high efficiency, the TGA2219-CP minimizes the strain on the system-level cooling requirements, further reducing system operating costs. Superior electrical performance and thermal management makes the TGA2219-CP ideal for supporting communications and radar applications in both commercial and military markets.
Both RF ports have integrated DC blocking capacitors and are fully matched to 50 ohms.
For additional information on GaN thermal performance refer to the following application note and video.
特别应用
- Data Link
- Radar
- Satellite Communications (Satcom)
- EW Signal Jammer
- Ku Band Radar
- Repeaters / Boosters / DAS
| 频率最小值(GHz) | 13.4 |
| 频率最大值(GHz) | 16.5 |
| Pout(W) | 25 |
| 增益(dB) | > 30 |
| PAE(%) | > 31 |
| OIP3(dBm) | N/A |
| 电压(V) | 28 |
| 电流(mA) | 450 |
| 封装类型 | Cu Base |
| 封装(mm) | 15.2 x 15.2 x 3.5 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.2.C |