RFAM3790
45 - 1218 MHz GaAs Edge QAM Integrated Amplifier
关键性能
- Excellent Linearity
- Extremely High Output Capability
- Voltage Controlled Attenuator
- Power Enable Featrure
- Extremely Low Distortion
- Optimal Reliability
- Low Noise
- Unconditionally Stable Under all Terminations
- 28.5 dB Typical Gain at 1218MHz
- 410mA Typical at 12VDC
Qorvo's RFAM3790 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability.
| 类型 | Downstream |
| 频率最小值(MHz) | 45 |
| 频率最大值(MHz) | 1,218 |
| 增益(dB) | 28.5 |
| Pout(dBmV) | 45 |
| CSO(dBc) | -70 |
| CTB(dBc) | -67 |
| NF(dB) | 4 |
| 电压(V) | 12 |
| 电流(mA) | 410 |
| 封装类型 | MCM |
| 封装(mm) | 11 x 11 x 1.375 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ECCN | 5A991.B |