QPM1021
10 - 12 GHz 100 Watt GaN Power Amplifier Module
Qorvo's QPM1021 is a packaged, high power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process. The QPM1021 operates from 10 – 12 GHz and provides 100 W (50 dBm) of saturated output power with 20 dB of large signal gain and greater than 32 % power–added efficiency.
The QPM1021 is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package, with a pure copper base for superior thermal management. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration.
The QPM1021 is ideally suited for both commercial and military radar systems, satellite communications systems, and data links.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
主要特性
- Frequency Range: 10 - 12 GHz
- PSAT: > 50 dBm (PIN = 28 dBm)
- PAE: > 32% (PIN = 28 dBm)
- Large Signal Gain: > 20 dB (PIN = 28 dBm)
- Small Signal Gain: > 26 dB
- Bias: VD = 28 V, IDQ = 2.0 A
- Package Dimensions: 19.05 x 19.05 x 4.52 mm
- Performance Under Pulsed Operation
典型应用
- Radar
- Electronic Warfare
参数
技术文档
Product Data Sheet
数据手册PCB Symbol, Footprint & 3D Model (provided by SamacSys)
PCB Layout FilesApplication Note: GaN Bias Circuit Design Guidelines
应用笔记Application Note: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
应用笔记Application of Arctic Silver 5 Thermal Compound and Indium Shims for Qorvo CP-style Packaged Components
应用笔记High-Performance Defense and Aerospace Solutions
手册Qorvo Field-Proven GaN Solutions
手册
设计资源
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