关键性能
- Frequency Range: 10 - 12 GHz
- PSAT: > 50 dBm (PIN = 28 dBm)
- PAE: > 32% (PIN = 28 dBm)
- Large Signal Gain: > 20 dB (PIN = 28 dBm)
- Small Signal Gain: > 26 dB
- Bias: VD = 28 V, IDQ = 2.0 A
- Package Dimensions: 19.05 x 19.05 x 4.52 mm
- Performance Under Pulsed Operation
Qorvo's QPM1021 is a packaged, high power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process. The QPM1021 operates from 10 – 12 GHz and provides 100 W (50 dBm) of saturated output power with 20 dB of large signal gain and greater than 32 % power–added efficiency.
The QPM1021 is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package, with a pure copper base for superior thermal management. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration.
The QPM1021 is ideally suited for both commercial and military radar systems, satellite communications systems, and data links.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
特别应用
- Radar
- Electronic Warfare
| 频率最小值(GHz) | 10 |
| 频率最大值(GHz) | 12 |
| Psat(dBm) | 50 |
| 增益(dB) | 20 |
| PAE(%) | 32 |
| 电压(V) | 28 |
| 电流(mA) | 2,000 |
| 封装类型 | CP |
| 封装(mm) | 19.05 x 19.05 x 4.52 |
| RoHS | Yes |
| Lead Free | No |
| Halogen Free | Yes |
| ITAR Restricted | No |